MMIX1F160N30T PDF and Equivalents Search

 

MMIX1F160N30T PDF Specs and Replacement


   Type Designator: MMIX1F160N30T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 570 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 102 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 1770 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: ISOLATED TAB
 

 MMIX1F160N30T substitution

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MMIX1F160N30T PDF Specs

 ..1. Size:183K  ixys
mmix1f160n30t.pdf pdf_icon

MMIX1F160N30T

Advance Technical Information GigaMOSTM TrenchTM VDSS = 300V MMIX1F160N30T HiperFETTM ID25 = 102A Power MOSFET RDS(on) 20m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 150 C 300 V V... See More ⇒

 7.1. Size:182K  ixys
mmix1f132n50p3.pdf pdf_icon

MMIX1F160N30T

Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V MMIX1F132N50P3 Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250ns D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V Isolated Tab VDGR TJ = ... See More ⇒

 7.2. Size:183K  ixys
mmix1f180n25t.pdf pdf_icon

MMIX1F160N30T

Advance Technical Information GigaMOSTM TrenchTM VDSS = 250V MMIX1F180N25T HiperFETTM ID25 = 130A Power MOSFET RDS(on) 13m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 150 C 250 V V... See More ⇒

 8.1. Size:225K  ixys
mmix1f420n10t.pdf pdf_icon

MMIX1F160N30T

Advance Technical Information GigaMOSTM TrenchTM VDSS = 100V MMIX1F420N10T HiperFETTM ID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V Isolated Tab ... See More ⇒

Detailed specifications: MMFTP84 , MMIS60R580PTH , MMIS60R750PTH , MMIS60R900PTH , MMIS70H900QTH , MMIS70R1K4PTH , MMIS70R900PTH , MMIX1F132N50P3 , IRFB4110 , MMIX1F180N25T , MMIX1F210N30P3 , MMIX1F230N20T , MMIX1F360N15T2 , MMIX1F40N110P , MMIX1F420N10T , MMIX1F44N100Q3 , MML60R190PTH .

Keywords - MMIX1F160N30T MOSFET specs

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