MMN2302 Datasheet and Replacement
Type Designator: MMN2302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.48 nS
Cossⓘ - Output Capacitance: 86.81 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-23
MMN2302 substitution
MMN2302 Datasheet (PDF)
mmn2302.pdf

MMN2302Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@2.8A = 60mRDS(ON), Vgs@2.5V, Ids@2.0A = 115mRDS(ON), Vgs@1.8V, Ids@2.0A = 130mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top View N-C
mmn2312.pdf

MMN2312Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@5.0A = 31mRDS(ON), Vgs@2.5V, Ids@4.5A = 37mRDS(ON), Vgs@1.8V, Ids@4.0A = 47mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top View N-Cha
Datasheet: MMIX1F230N20T , MMIX1F360N15T2 , MMIX1F40N110P , MMIX1F420N10T , MMIX1F44N100Q3 , MML60R190PTH , MML60R290PTH , MML65R190PTH , 2SK3878 , MMN2312 , MMN25N03 , MMN3205 , MMN3220 , MMN3400 , MMN35N03 , MMN404 , MMN4307 .
History: TSM2N7002KCU | IPB34CN10N | FQD2N50TF | NCEA6050KA | DH045N06I | P2610BT | DMN3035LWN
Keywords - MMN2302 MOSFET datasheet
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History: TSM2N7002KCU | IPB34CN10N | FQD2N50TF | NCEA6050KA | DH045N06I | P2610BT | DMN3035LWN



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