All MOSFET. MMN2302 Datasheet

 

MMN2302 Datasheet and Replacement


   Type Designator: MMN2302
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.48 nS
   Cossⓘ - Output Capacitance: 86.81 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
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MMN2302 Datasheet (PDF)

 ..1. Size:147K  m-mos
 mmn2302.pdf pdf_icon

MMN2302

MMN2302Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@2.8A = 60mRDS(ON), Vgs@2.5V, Ids@2.0A = 115mRDS(ON), Vgs@1.8V, Ids@2.0A = 130mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top View N-C

 9.1. Size:147K  m-mos
 mmn2312.pdf pdf_icon

MMN2302

MMN2312Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@5.0A = 31mRDS(ON), Vgs@2.5V, Ids@4.5A = 37mRDS(ON), Vgs@1.8V, Ids@4.0A = 47mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top View N-Cha

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: LSF65R570GT | CSD16342Q5A

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