MMN3220 Specs and Replacement

Type Designator: MMN3220

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.86 nS

Cossⓘ - Output Capacitance: 59.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOT-23

MMN3220 substitution

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MMN3220 datasheet

 ..1. Size:132K  m-mos
 mmn3220.pdf pdf_icon

MMN3220

MMN3220 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A = 32m RDS(ON), Vgs@2.5V, Ids@4.5A = 40m RDS(ON), Vgs@1.8V, Ids@4.0A = 55m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT -23 Internal Schematic Diagram Drain Gate Source Top Vi... See More ⇒

 9.1. Size:146K  m-mos
 mmn3205.pdf pdf_icon

MMN3220

MMN3205 Data Sheet M-MOS Semiconductor Hong Kong Limited 55V N-Channel Enhancement-Mode MOSFET VDS= 55V RDS(ON), Vgs@10V, Ids@62A = 8m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Fully Characterized Avalanche Voltage and Current TO-220 Internal Schematic Diagram Drain Gate Source ... See More ⇒

Detailed specifications: MMIX1F44N100Q3, MML60R190PTH, MML60R290PTH, MML65R190PTH, MMN2302, MMN2312, MMN25N03, MMN3205, IRF9540, MMN3400, MMN35N03, MMN404, MMN4307, MMN4326, MMN4336, MMN4338, MMN4364DY

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.