All MOSFET. MMN3220 Datasheet

 

MMN3220 Datasheet and Replacement


   Type Designator: MMN3220
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.86 nS
   Cossⓘ - Output Capacitance: 59.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOT-23
 

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MMN3220 Datasheet (PDF)

 ..1. Size:132K  m-mos
 mmn3220.pdf pdf_icon

MMN3220

MMN3220Package Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@5.0A = 32mRDS(ON), Vgs@2.5V, Ids@4.5A = 40mRDS(ON), Vgs@1.8V, Ids@4.0A = 55mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top Vi

 9.1. Size:146K  m-mos
 mmn3205.pdf pdf_icon

MMN3220

MMN3205Data SheetM-MOS Semiconductor Hong Kong Limited55V N-Channel Enhancement-Mode MOSFETVDS= 55VRDS(ON), Vgs@10V, Ids@62A = 8mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capabilityFully Characterized Avalanche Voltage and CurrentTO-220 Internal Schematic DiagramDrain Gate Source

Datasheet: MMIX1F44N100Q3 , MML60R190PTH , MML60R290PTH , MML65R190PTH , MMN2302 , MMN2312 , MMN25N03 , MMN3205 , K3569 , MMN3400 , MMN35N03 , MMN404 , MMN4307 , MMN4326 , MMN4336 , MMN4338 , MMN4364DY .

History: APT4080BN | 25N10G-TM3-T

Keywords - MMN3220 MOSFET datasheet

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