All MOSFET. MMN35N03 Datasheet

 

MMN35N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMN35N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.26 nC
   trⓘ - Rise Time: 4.16 nS
   Cossⓘ - Output Capacitance: 277.66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252

 MMN35N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMN35N03 Datasheet (PDF)

 ..1. Size:394K  m-mos
 mmn35n03.pdf

MMN35N03 MMN35N03

MMN35N03Package Data SheetM-MOS Semiconductor Hong Kong LimitedN-Channel Enhancement-Mode MOSFETVDS= 25VRDS(ON), Vgs@10V, Ids@30A = 9mRDS(ON), Vgs@4.5V, Ids@30A = 13mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentTO-252 (D-PAK) Internal Schematic DiagramTop View N-Channe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MTN9N50FP | SSF1122

 

 
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