All MOSFET. MMN35N03 Datasheet

 

MMN35N03 Datasheet and Replacement


   Type Designator: MMN35N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.16 nS
   Cossⓘ - Output Capacitance: 277.66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252
 

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MMN35N03 Datasheet (PDF)

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MMN35N03

MMN35N03Package Data SheetM-MOS Semiconductor Hong Kong LimitedN-Channel Enhancement-Mode MOSFETVDS= 25VRDS(ON), Vgs@10V, Ids@30A = 9mRDS(ON), Vgs@4.5V, Ids@30A = 13mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentTO-252 (D-PAK) Internal Schematic DiagramTop View N-Channe

Datasheet: MML60R290PTH , MML65R190PTH , MMN2302 , MMN2312 , MMN25N03 , MMN3205 , MMN3220 , MMN3400 , IRFP260 , MMN404 , MMN4307 , MMN4326 , MMN4336 , MMN4338 , MMN4364DY , MMN4410 , MMN4414 .

History: CTLDM7181-M832D | TK15X60U | SPB80N03S2 | YJG90G10A | CS6N70F | BUK9K18-40E | STN3414

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