MMN35N03 Specs and Replacement

Type Designator: MMN35N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.16 nS

Cossⓘ - Output Capacitance: 277.66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-252

MMN35N03 substitution

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MMN35N03 datasheet

 ..1. Size:394K  m-mos
 mmn35n03.pdf pdf_icon

MMN35N03

MMN35N03 Package Data Sheet M-MOS Semiconductor Hong Kong Limited N-Channel Enhancement-Mode MOSFET VDS= 25V RDS(ON), Vgs@10V, Ids@30A = 9m RDS(ON), Vgs@4.5V, Ids@30A = 13m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current TO-252 (D-PAK) Internal Schematic Diagram Top View N-Channe... See More ⇒

Detailed specifications: MML60R290PTH, MML65R190PTH, MMN2302, MMN2312, MMN25N03, MMN3205, MMN3220, MMN3400, 2SK3878, MMN404, MMN4307, MMN4326, MMN4336, MMN4338, MMN4364DY, MMN4410, MMN4414

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