MMN4410 Specs and Replacement

Type Designator: MMN4410

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.3 nS

Cossⓘ - Output Capacitance: 376.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: SOP-8

MMN4410 substitution

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MMN4410 datasheet

 ..1. Size:198K  m-mos
 mmn4410.pdf pdf_icon

MMN4410

MMN4410 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@18A = 5.5m RDS(ON), Vgs@4.5V, Ids@15A = 6.2m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET ... See More ⇒

 8.1. Size:205K  m-mos
 mmn4414.pdf pdf_icon

MMN4410

MMN4414 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A = 26m RDS(ON), Vgs@4.5V, Ids@5A = 40m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET Maximum Ratings and Thermal C... See More ⇒

 8.2. Size:190K  m-mos
 mmn4418.pdf pdf_icon

MMN4410

MMN4418 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@10A = 17m RDS(ON), Vgs@4.5V, Ids@5A = 50m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current SO-8 Internal Schematic Diagram Drain Gate Source Top View... See More ⇒

 9.1. Size:162K  m-mos
 mmn4422.pdf pdf_icon

MMN4410

MMN4422 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@11A = 15m RDS(ON), Vgs@4.5V, Ids@9A = 24m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET Ma... See More ⇒

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Detailed specifications: MMN3400, MMN35N03, MMN404, MMN4307, MMN4326, MMN4336, MMN4338, MMN4364DY, K3569, MMN4414, MMN4418, MMN4422, MMN4430, MMN4444, MMN4446, MMN45N03, MMN4818

Keywords - MMN4410 MOSFET specs

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