All MOSFET. MMN75N03 Datasheet

 

MMN75N03 Datasheet and Replacement


   Type Designator: MMN75N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16.6 nS
   Cossⓘ - Output Capacitance: 736.37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-252
 

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MMN75N03 Datasheet (PDF)

 ..1. Size:184K  m-mos
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MMN75N03

MMN75N03Data SheetM-MOS Semiconductor Hong Kong Limited25V N-Channel Enhancement-Mode MOSFETVDS= 25VRDS(ON), Vgs@10V, Ids@20A = 4.5mRDS(ON), Vgs@4.5V, Ids@20A = 6.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentDPAK Internal Schematic DiagramDrain Gate Source Top

Datasheet: MMN4946BEY , MMN55N03 , MMN60NF06 , MMN65N03 , MMN6680 , MMN6968E , MMN7230 , MMN7402 , IRF1407 , MMN8205 , MMN8218 , MMN8220 , MMN8804 , MMN8818E , MMN8818N , MMN8822 , MMN9926 .

History: IPB65R110CFDA | CEM3128

Keywords - MMN75N03 MOSFET datasheet

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