MMP2301 Datasheet and Replacement
Type Designator: MMP2301
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.12 nS
Cossⓘ - Output Capacitance: 106.15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT-23
MMP2301 substitution
MMP2301 Datasheet (PDF)
mmp2301.pdf
MMP2301Data SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20VRDS(ON), Vgs@-4.5V, Ids@-2.8A = 100mRDS(ON), Vgs@-2.5V, Ids@-2.0A = 150mRDS(ON), Vgs@-1.8V, Ids@-2.0A = 170mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT- 23 Internal Schematic DiagramTop View P-Channel MOSFETM
mmp2311.pdf
MMP2311Data SheetM-MOS Semiconductor Hong Kong Limited12V P-Channel Enhancement-Mode MOSFETVDS= -12VRDS(ON), Vgs@-4.5V, Ids@-3.5A = 58mRDS(ON), Vgs@-2.5V, Ids@-3.0A = 72mRDS(ON), Vgs@-1.8V, Ids@-0.7A = 120mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT-23 Internal Schematic DiagramTop View P-Channel MOSFETMaxi
mmp2323.pdf
MMP2323Data SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20VRDS(ON), Vgs@-4.5V, Ids@-4.7A = 39mRDS(ON), Vgs@-2.5V, Ids@-4.1A = 52mRDS(ON), Vgs@-1.8V, Ids@-2.0A = 68mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOT-23 Internal Schematic DiagramTop
Datasheet: MMN8220 , MMN8804 , MMN8818E , MMN8818N , MMN8822 , MMN9926 , MMN9926BDY , MMN9926E , SI2302 , MMP2311 , MMP2323 , MMP3401 , MMP3415E , MMP3443 , MMP4353 , MMP4357 , MMP4383 .
Keywords - MMP2301 MOSFET datasheet
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