MMP2323
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMP2323
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 4.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19.1
nC
trⓘ - Rise Time: 9.04
nS
Cossⓘ -
Output Capacitance: 178.42
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039
Ohm
Package:
SOT-23
MMP2323
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMP2323
Datasheet (PDF)
..1. Size:166K m-mos
mmp2323.pdf
MMP2323Data SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20VRDS(ON), Vgs@-4.5V, Ids@-4.7A = 39mRDS(ON), Vgs@-2.5V, Ids@-4.1A = 52mRDS(ON), Vgs@-1.8V, Ids@-2.0A = 68mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOT-23 Internal Schematic DiagramTop
9.1. Size:152K m-mos
mmp2301.pdf
MMP2301Data SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20VRDS(ON), Vgs@-4.5V, Ids@-2.8A = 100mRDS(ON), Vgs@-2.5V, Ids@-2.0A = 150mRDS(ON), Vgs@-1.8V, Ids@-2.0A = 170mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT- 23 Internal Schematic DiagramTop View P-Channel MOSFETM
9.2. Size:161K m-mos
mmp2311.pdf
MMP2311Data SheetM-MOS Semiconductor Hong Kong Limited12V P-Channel Enhancement-Mode MOSFETVDS= -12VRDS(ON), Vgs@-4.5V, Ids@-3.5A = 58mRDS(ON), Vgs@-2.5V, Ids@-3.0A = 72mRDS(ON), Vgs@-1.8V, Ids@-0.7A = 120mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT-23 Internal Schematic DiagramTop View P-Channel MOSFETMaxi
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.