MMP3415E Specs and Replacement
Type Designator: MMP3415E
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1480 nS
Cossⓘ - Output Capacitance: 287 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT-23
MMP3415E substitution
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MMP3415E datasheet
mmp3415e.pdf
MMP3415E Data Sheet M-MOS Semiconductor Hong Kong Limited 20V P-Channel Enhancement-Mode MOSFET VDS= -20V ID= -4A ESD Protected Gate 3000V RDS(ON), Vgs@-4.5V, Ids@-4A = 55m RDS(ON), Vgs@-2.5V, Ids@-4A = 63m RDS(ON), Vgs@-1.8V, Ids@-2A = 73m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23 Internal Schematic Diagram To... See More ⇒
mmp3443.pdf
MMP3443 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-4.7A = 60m RDS(ON), Vgs@-2.5V, Ids@-1.0A = 100m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance TSOP-06 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics... See More ⇒
mmp3401.pdf
MMP3401 Package Level Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-4.5V, Ids@-4.0A = 75m RDS(ON), Vgs@-2.5V, Ids@-1.0A = 120m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT -23 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal C... See More ⇒
Detailed specifications: MMN8822, MMN9926, MMN9926BDY, MMN9926E, MMP2301, MMP2311, MMP2323, MMP3401, IRF520, MMP3443, MMP4353, MMP4357, MMP4383, MMP4399, MMP4407, MMP4411, MMP4411DY
Keywords - MMP3415E MOSFET specs
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