MMP3443 MOSFET. Datasheet pdf. Equivalent
Type Designator: MMP3443
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 4.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.92 nC
trⓘ - Rise Time: 5.28 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TSOP-6
MMP3443 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMP3443 Datasheet (PDF)
mmp3443.pdf
MMP3443Data SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20VRDS(ON), Vgs@-4.5V, Ids@-4.7A = 60mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 100mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceTSOP-06 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics
mmp3401.pdf
MMP3401Package Level Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-4.5V, Ids@-4.0A = 75mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 120mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal C
mmp3415e.pdf
MMP3415EData SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20V ID= -4A ESD Protected Gate : 3000VRDS(ON), Vgs@-4.5V, Ids@-4A = 55mRDS(ON), Vgs@-2.5V, Ids@-4A = 63mRDS(ON), Vgs@-1.8V, Ids@-2A = 73mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT-23 Internal Schematic DiagramTo
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: 3N209
History: 3N209
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