MMP3443 Datasheet and Replacement
Type Designator: MMP3443
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.28 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TSOP-6
MMP3443 substitution
MMP3443 Datasheet (PDF)
mmp3443.pdf

MMP3443Data SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20VRDS(ON), Vgs@-4.5V, Ids@-4.7A = 60mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 100mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceTSOP-06 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics
mmp3401.pdf

MMP3401Package Level Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-4.5V, Ids@-4.0A = 75mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 120mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal C
mmp3415e.pdf

MMP3415EData SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20V ID= -4A ESD Protected Gate : 3000VRDS(ON), Vgs@-4.5V, Ids@-4A = 55mRDS(ON), Vgs@-2.5V, Ids@-4A = 63mRDS(ON), Vgs@-1.8V, Ids@-2A = 73mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT-23 Internal Schematic DiagramTo
Datasheet: MMN9926 , MMN9926BDY , MMN9926E , MMP2301 , MMP2311 , MMP2323 , MMP3401 , MMP3415E , IRFB31N20D , MMP4353 , MMP4357 , MMP4383 , MMP4399 , MMP4407 , MMP4411 , MMP4411DY , MMP4415A .
History: NVDD5894NL | 2SK105
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History: NVDD5894NL | 2SK105



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