MMP4357 Datasheet and Replacement. Cross Reference Search

MMP4357 Datasheet (PDF)

..1. Size:241K m-mos
mmp4357.pdf pdf_icon

MMP4357Package Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-5.3A =75mRDS(ON), Vgs@-4.5V, Ids@-4.2A =105mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteris

8.1. Size:230K m-mos
mmp4353.pdf pdf_icon

MMP4353Package Data SheetM-MOS Semiconductor Hong Kong Limited30 P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-4.5V, Ids@-4.0 = 75mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 119mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceS0-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characterist

9.1. Size:155K m-mos
mmp4383.pdf pdf_icon

MMP4383Package Data SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-3.9A = 85mRDS(ON), Vgs@-4.5V, Ids@-3.0A = 130mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characte

9.2. Size:150K m-mos
mmp4399.pdf pdf_icon

MMP4399Preliminary Package Data SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-3.9A = 150mRDS(ON), Vgs@-4.5V, Ids@-3.0A = 200mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOS

Datasheet: MMN9926E , MMP2301 , MMP2311 , MMP2323 , MMP3401 , MMP3415E , MMP3443 , MMP4353 , AON6380 , MMP4383 , MMP4399 , MMP4407 , MMP4411 , MMP4411DY , MMP4415A , MMP4425 , MMP4425DY .