MMP4357 Specs and Replacement

Type Designator: MMP4357

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.3 nS

Cossⓘ - Output Capacitance: 52.525 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOP-8

MMP4357 substitution

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MMP4357 datasheet

 ..1. Size:241K  m-mos
 mmp4357.pdf pdf_icon

MMP4357

MMP4357 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A =75m RDS(ON), Vgs@-4.5V, Ids@-4.2A =105m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteris... See More ⇒

 8.1. Size:230K  m-mos
 mmp4353.pdf pdf_icon

MMP4357

MMP4353 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-4.5V, Ids@-4.0 = 75m RDS(ON), Vgs@-2.5V, Ids@-1.0A = 119m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S0-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characterist... See More ⇒

 9.1. Size:155K  m-mos
 mmp4383.pdf pdf_icon

MMP4357

MMP4383 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-3.9A = 85m RDS(ON), Vgs@-4.5V, Ids@-3.0A = 130m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characte... See More ⇒

 9.2. Size:150K  m-mos
 mmp4399.pdf pdf_icon

MMP4357

MMP4399 Preliminary Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-3.9A = 150m RDS(ON), Vgs@-4.5V, Ids@-3.0A = 200m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Top View P-Channel MOS... See More ⇒

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Detailed specifications: MMN9926E, MMP2301, MMP2311, MMP2323, MMP3401, MMP3415E, MMP3443, MMP4353, IRFZ24N, MMP4383, MMP4399, MMP4407, MMP4411, MMP4411DY, MMP4415A, MMP4425, MMP4425DY

Keywords - MMP4357 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs