MMP6463 Specs and Replacement

Type Designator: MMP6463

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.96 nS

Cossⓘ - Output Capacitance: 634.36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TSSOP-8

MMP6463 substitution

- MOSFET ⓘ Cross-Reference Search

 

MMP6463 datasheet

 ..1. Size:149K  m-mos
 mmp6463.pdf pdf_icon

MMP6463

MMP6463 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-7.4A = 15.0m RDS(ON), Vgs@-2.5V, Ids@-6.3A = 20.0m RDS(ON), Vgs@-1.8V, Ids@-5.5A = 27.0m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for battery multiplexing applications TSSOP-8 Internal... See More ⇒

 8.1. Size:148K  m-mos
 mmp6465.pdf pdf_icon

MMP6463

MMP6465 Data Sheet M-MOS Semiconductor Hong Kong Limited 12V P-Channel Enhancement-Mode MOSFET VDS= -12V RDS(ON), Vgs@-4.5V, Ids@-8.8A = 12m RDS(ON), Vgs@-2.5V, Ids@-7.4A = 17m RDS(ON), Vgs@-1.8V, Ids@-6.0A = 25m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for battery multiplexing applications TSSOP-8 Internal Sche... See More ⇒

Detailed specifications: MMP4435BDY, MMP60R190PTH, MMP60R195PCTH, MMP60R290PCTH, MMP60R290PTH, MMP60R360PTH, MMP60R580PTH, MMP60R750PTH, K2611, MMP6465, MMP65R190PTH, MMP6965, MMP6967, MMP6975, MMP7245, MMP7277, MMP7401

Keywords - MMP6463 MOSFET specs

 MMP6463 cross reference

 MMP6463 equivalent finder

 MMP6463 pdf lookup

 MMP6463 substitution

 MMP6463 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility