MMP9435BDY Datasheet and Replacement
Type Designator: MMP9435BDY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 235.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: SOP-8
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MMP9435BDY Datasheet (PDF)
mmp9435bdy.pdf

MMP9435BDYData SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-5.7A = 42mRDS(ON), Vgs@-4.5V, Ids@-4.4A = 70mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Rating
mmp9435.pdf

MMP9435Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-5.3A = 60mRDS(ON), Vgs@-4.5V, Ids@-4.2A = 90mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings an
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: DE275X2-102N06A | DH150N12B | 12N65KG-TF1-T | PTP02N03N | R5016ANJ | BSB280N15NZ3G | ELM13401CA
Keywords - MMP9435BDY MOSFET datasheet
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History: DE275X2-102N06A | DH150N12B | 12N65KG-TF1-T | PTP02N03N | R5016ANJ | BSB280N15NZ3G | ELM13401CA



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