All MOSFET. VN0104ND Datasheet

 

VN0104ND Datasheet and Replacement


   Type Designator: VN0104ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: DICE
 

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VN0104ND Datasheet (PDF)

 8.1. Size:588K  supertex
vn0104.pdf pdf_icon

VN0104ND

Supertex inc. VN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power

 9.1. Size:51K  njs
zvn0106a.pdf pdf_icon

VN0104ND

 9.2. Size:587K  supertex
vn0106.pdf pdf_icon

VN0104ND

Supertex inc. VN0106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power

Datasheet: VEC2315 , VEC2616 , VN0104N2 , VN0104N3 , VN0104N5 , VN0104N6 , VN0104N7 , VN0104N9 , IRF540N , VN0106N2 , VN0106N3 , VN0106N5 , VN0106N6 , VN0106N7 , VN0106N9 , VN0106ND , VN0109N2 .

History: STP6N62K3 | CEF9060N | QM3001K | PQ5G4JN | IPA60R600P6 | IPD12CNE8NG

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