VN0106N2 Datasheet and Replacement
Type Designator: VN0106N2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Id|ⓘ - Maximum Drain Current: 2 A
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 20 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-39
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VN0106N2 Datasheet (PDF)
vn0106.pdf
Supertex inc. VN0106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power
vn0104.pdf
Supertex inc. VN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - VN0106N2 MOSFET datasheet
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History: VBNC1303 | IRFS4010PBF
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