All MOSFET. VN0106N2 Datasheet

 

VN0106N2 Datasheet and Replacement


   Type Designator: VN0106N2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-39
 

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VN0106N2 Datasheet (PDF)

 ..1. Size:62K  njs
 vn0104n2 vn0104n3 vn0104n5 vn0104n6 vn0104n7 vn0104n9 vn0104nd vn0106n2 vn0106n3 vn0106n5 vn0106n6 vn0106n7 vn0106n9 vn0106nd vn0109n2 vn0109n3 vn0109n5 vn0109n9 vn0109nd.pdf pdf_icon

VN0106N2

 8.1. Size:51K  njs
 zvn0106a.pdf pdf_icon

VN0106N2

 8.2. Size:587K  supertex
 vn0106.pdf pdf_icon

VN0106N2

Supertex inc. VN0106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power

 9.1. Size:588K  supertex
 vn0104.pdf pdf_icon

VN0106N2

Supertex inc. VN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power

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Datasheet: VEC2616 , VN0104N2 , VN0104N3 , VN0104N5 , VN0104N6 , VN0104N7 , VN0104N9 , VN0104ND , 50N06 , VN0106N3 , VN0106N5 , VN0106N6 , VN0106N7 , VN0106N9 , VN0106ND , VN0109N2 , VN0109N3 .

History: TF2323 | BUK78150-55

Keywords - VN0106N2 MOSFET datasheet

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