VN0106N5 Specs and Replacement
Type Designator: VN0106N5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 10 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Id| ⓘ - Maximum Drain Current: 2 A
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-220
VN0106N5 substitution
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VN0106N5 datasheet
vn0104n2 vn0104n3 vn0104n5 vn0104n6 vn0104n7 vn0104n9 vn0104nd vn0106n2 vn0106n3 vn0106n5 vn0106n6 vn0106n7 vn0106n9 vn0106nd vn0109n2 vn0109n3 vn0109n5 vn0109n9 vn0109nd.pdf
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vn0106.pdf
Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power... See More ⇒
vn0104.pdf
Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power... See More ⇒
Detailed specifications: VN0104N3, VN0104N5, VN0104N6, VN0104N7, VN0104N9, VN0104ND, VN0106N2, VN0106N3, IRFZ44, VN0106N6, VN0106N7, VN0106N9, VN0106ND, VN0109N2, VN0109N3, VN0109N5, VN0109N9
Keywords - VN0106N5 MOSFET specs
VN0106N5 cross reference
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VN0106N5 substitution
VN0106N5 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SSP1N60A | JCS2N60C | AON6788
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