VN0106N9 MOSFET Datasheet: N-Ch, 60V, 2A. Full specification with pinout and replacement list

VN0106N9 Specs and Replacement

Type Designator: VN0106N9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-52

VN0106N9 substitution

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VN0106N9 datasheet

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Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power... See More ⇒

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Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power... See More ⇒