VN0106N9 Datasheet and Replacement
Type Designator: VN0106N9
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-52
VN0106N9 substitution
VN0106N9 Datasheet (PDF)
vn0106.pdf
Supertex inc. VN0106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power
vn0104.pdf
Supertex inc. VN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power
Datasheet: VN0104N7 , VN0104N9 , VN0104ND , VN0106N2 , VN0106N3 , VN0106N5 , VN0106N6 , VN0106N7 , IRFP260N , VN0106ND , VN0109N2 , VN0109N3 , VN0109N5 , VN0109N9 , VN0109ND , VN0300 , VN0300L .
Keywords - VN0106N9 MOSFET datasheet
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