VN0660N5 Datasheet and Replacement
Type Designator: VN0660N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
Package: TO-220
VN0660N5 substitution
VN0660N5 Datasheet (PDF)
vn0660n3 vn0660n5.pdf

VN0660N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-92 TO-220 Die600V 20 0.25A VN0660N3 VN0660N5 VN0660NDMIL visual screening available7Features Advanced DMOS TechnologyNot recommended for new designs. Please use VN2460 instead. Free from secondary breakdownThese enhancement-mode
Datasheet: VN0360N1 , VN0360N5 , VN0360ND , VN0550 , VN0605T , VN0606 , VN0610LL , VN0660N3 , 2N7000 , VN0808 , VN10K , VN10KCSM4 , VN10K-TO18 , VN10LE , VN10LLS , VN10LM , VN1206 .
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