All MOSFET. VN0660N5 Datasheet

 

VN0660N5 Datasheet and Replacement


   Type Designator: VN0660N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
   Package: TO-220
 

 VN0660N5 substitution

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VN0660N5 Datasheet (PDF)

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VN0660N5

VN0660N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-92 TO-220 Die600V 20 0.25A VN0660N3 VN0660N5 VN0660NDMIL visual screening available7Features Advanced DMOS TechnologyNot recommended for new designs. Please use VN2460 instead. Free from secondary breakdownThese enhancement-mode

Datasheet: VN0360N1 , VN0360N5 , VN0360ND , VN0550 , VN0605T , VN0606 , VN0610LL , VN0660N3 , IRF4905 , VN0808 , VN10K , VN10KCSM4 , VN10K-TO18 , VN10LE , VN10LLS , VN10LM , VN1206 .

History: FDT86113LZ | PHP21N06LT | HM2318A | 2301H | FDS8984F085 | FDT86246 | PHP3055E

Keywords - VN0660N5 MOSFET datasheet

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