VN0660N5 Specs and Replacement
Type Designator: VN0660N5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
Package: TO-220
VN0660N5 substitution
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VN0660N5 datasheet
vn0660n3 vn0660n5.pdf
VN0660 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-92 TO-220 Die 600V 20 0.25A VN0660N3 VN0660N5 VN0660ND MIL visual screening available 7 Features Advanced DMOS Technology Not recommended for new designs. Please use VN2460 instead. Free from secondary breakdown These enhancement-mode... See More ⇒
Detailed specifications: VN0360N1, VN0360N5, VN0360ND, VN0550, VN0605T, VN0606, VN0610LL, VN0660N3, IRF4905, VN0808, VN10K, VN10KCSM4, VN10K-TO18, VN10LE, VN10LLS, VN10LM, VN1206
Keywords - VN0660N5 MOSFET specs
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