VN0660N5 MOSFET. Datasheet pdf. Equivalent
Type Designator: VN0660N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 0.75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
Package: TO-220
VN0660N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VN0660N5 Datasheet (PDF)
..1. Size:30K supertex
vn0660n3 vn0660n5.pdf
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VN0660N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-92 TO-220 Die600V 20 0.25A VN0660N3 VN0660N5 VN0660NDMIL visual screening available7Features Advanced DMOS TechnologyNot recommended for new designs. Please use VN2460 instead. Free from secondary breakdownThese enhancement-mode
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
