VN10KCSM4 MOSFET. Datasheet pdf. Equivalent
Type Designator: VN10KCSM4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
tonⓘ - Turn-on Time: 7 nS
Cossⓘ - Output Capacitance: 16 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: LCC3
VN10KCSM4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VN10KCSM4 Datasheet (PDF)
vn10kc.pdf
VN10KCNew ProductVishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)60 5 @ VGS = 10 V 0.8 to 2.5 0.31FEATURES BENEFITS APPLICATIONSD Zener Diode Input Protected D Extra ESD Protection D Drivers: Relays, Solenoids, Lamps, Hammers, Displays,Memories, Transistors, etc.D Low On-Resistance: 3 W D Low Offset VoltageD Batt
vn0610l vn10kls vn2222l.pdf
VN0610L, VN10KLS, VN2222LVishay SiliconixN-Channel 60-V (D-S) MOSFETs with Zener GatePRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Zener Diode Input Protected D Extra ESD Protection D Drivers: Rel
vn0610l vn10kls vn2222l.pdf
VN0610L, VN10KLS, VN2222LVishay SiliconixN-Channel 60-V (D-S) MOSFETs with Zener GatePRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Zener Diode Input Protected D Extra ESD Protection D Drivers: Rel
vn10k.pdf
Supertex inc. VN10KN-Channel Enhancement-ModeVertical DMOS FETFeatures General DescriptionThis enhancement-mode (normally-off) transistor utilizes a Free from secondary breakdownvertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power
vn10k-to18.pdf
N-CHANNEL ENHANCEMENT MODE MOSFET VN10K Low RDS(on), VGS(th), CISS And Fast Switching Speeds Hermetic TO-18 Metal package. Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc..) Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 60V VGS G
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
