VN2406D Datasheet and Replacement

TN2410L, VN2406D/L, VN2410L/LSVishay SiliconixN-Channel 240-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19FEATURES BENEFITS APPLICATIONSD

TN2410L, VN2406D/L, VN2410L/LSVishay SiliconixN-Channel 240-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19FEATURES BENEFITS APPLICATIONSD

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2406L/DTMOS FET TransistorVN2406L3 DRAINNChannel EnhancementMotorola Preferred Device2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 240 Vdc 123DrainGate Voltage VDGR 60 VdcGateSource VoltageCASE 2904, STYLE 22 Continuous VGS 20 VdcTO92 (

Supertex inc. VN2406N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h