SMC2360 Datasheet and Replacement. Cross Reference Search

SMC2360 Datasheet (PDF)

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SMC2360 60V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC2360 is the N-Channel logic enhancement 60V/6.1A, RDS(ON) =85m(typ.)@VGS =10V mode power field effect transistor is produced using high cell density. advanced trench technology to Improved dv/dt capability provide excellent RDS(ON) and low gate charge. Fast SwitchingThis device is su

9.1. Size:373K semtron
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SMC2342A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC2342A is the N-Channel logic 20V/5.0A, RDS(ON) =21m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/4.0A, RDS(ON) =26m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.8A, RDS(ON) =40m(typ.)@VGS =1.8V technology to provide excellent RD

9.2. Size:369K semtron
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SMC2333 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC2333 is the P-Channel logic enhancement -20V/-6.0A, RDS(ON) =22m(typ)@VGS =-10V mode power field effect transistor is produced using -20V/-6.0A, RDS(ON) =26m(typ)@VGS =-4.5V high cell density. advanced trench technology to -20V/-3.5A, RDS(ON) =36m(typ)@VGS =-2.5V provide excelle

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .