SMC2360 Datasheet and Replacement
Type Designator: SMC2360
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT-23
SMC2360 substitution
SMC2360 Datasheet (PDF)
smc2360.pdf

SMC2360 60V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC2360 is the N-Channel logic enhancement 60V/6.1A, RDS(ON) =85m(typ.)@VGS =10V mode power field effect transistor is produced using high cell density. advanced trench technology to Improved dv/dt capability provide excellent RDS(ON) and low gate charge. Fast SwitchingThis device is su
smc2342a.pdf

SMC2342A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC2342A is the N-Channel logic 20V/5.0A, RDS(ON) =21m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/4.0A, RDS(ON) =26m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.8A, RDS(ON) =40m(typ.)@VGS =1.8V technology to provide excellent RD
smc2333.pdf

SMC2333 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC2333 is the P-Channel logic enhancement -20V/-6.0A, RDS(ON) =22m(typ)@VGS =-10V mode power field effect transistor is produced using -20V/-6.0A, RDS(ON) =26m(typ)@VGS =-4.5V high cell density. advanced trench technology to -20V/-3.5A, RDS(ON) =36m(typ)@VGS =-2.5V provide excelle
Datasheet: SM9188DSO , SM9988CO , SM9989DSQG , SM9993DSQG , SM9A01NSF , SM9A01NSFP , SMC2333 , SMC2342A , RU7088R , SMC3054 , SMC3056 , SMC3400 , SMC3401 , SMC3407 , SMC3414 , SMC3415A , SMC3535 .
History: IPP030N10N5
Keywords - SMC2360 MOSFET datasheet
SMC2360 cross reference
SMC2360 equivalent finder
SMC2360 lookup
SMC2360 substitution
SMC2360 replacement
History: IPP030N10N5



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