All MOSFET. SMC3054 Datasheet

 

SMC3054 Datasheet and Replacement


   Type Designator: SMC3054
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.1 nC
   tr ⓘ - Rise Time: 126 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOT-89
 

 SMC3054 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SMC3054 Datasheet (PDF)

 ..1. Size:371K  semtron
 smc3054.pdf pdf_icon

SMC3054

SMC3054 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3054 is the N-Channel logic enhancement 20V/6.0A, RDS(ON) =24m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.0A, RDS(ON) =28m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.8A, RDS(ON) =38m(typ.)@VGS =1.8V provide excellent RDS

 8.1. Size:373K  semtron
 smc3056.pdf pdf_icon

SMC3054

SMC3056 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3056 is the N-Channel logic enhancement 20V/6.0A, RDS(ON) =22m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.0A, RDS(ON) =27m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.8A, RDS(ON) =35m(typ.)@VGS =1.8V provide excellent RDS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF7353D2PBF

Keywords - SMC3054 MOSFET datasheet

 SMC3054 cross reference
 SMC3054 equivalent finder
 SMC3054 lookup
 SMC3054 substitution
 SMC3054 replacement

 

 
Back to Top

 


 
.