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SMC3414 Specs and Replacement


   Type Designator: SMC3414
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11 nC
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT-23L
 

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SMC3414 Specs

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SMC3414

SMC3414 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m (typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m (typ.)@VGS =1.8V provide excellent RDS... See More ⇒

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 smc3415a.pdf pdf_icon

SMC3414

SMC3415A -20V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3415A is the P-Channel logic -20V/-4.0A, RDS(ON) =43m (typ)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-4.0A, RDS(ON) =58m (typ)@VGS =-2.5V produced using high cell density. advanced trench -20V/-2.0A, RDS(ON) =78m (typ)@VGS =-1.8V technology to provide excel... See More ⇒

 9.1. Size:369K  semtron
 smc3407.pdf pdf_icon

SMC3414

SMC3407 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m (typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design ... See More ⇒

 9.2. Size:372K  semtron
 smc3401.pdf pdf_icon

SMC3414

SMC3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ)@VGS =-2.5V provide excelle... See More ⇒

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Detailed specifications: SMC2333 , SMC2342A , SMC2360 , SMC3054 , SMC3056 , SMC3400 , SMC3401 , SMC3407 , AON7403 , SMC3415A , SMC3535 , SMC4420 , SMC4428 , SMC4738 , SMC4812 , SMC8205AS , SMC8205AW .

Keywords - SMC3414 MOSFET specs

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