SMC3414 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SMC3414
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 11 nC
trⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 116 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
Тип корпуса: SOT-23L
SMC3414 Datasheet (PDF)
smc3414.pdf
SMC3414 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS
smc3415a.pdf
SMC3415A -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3415A is the P-Channel logic -20V/-4.0A, RDS(ON) =43m(typ)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-4.0A, RDS(ON) =58m(typ)@VGS =-2.5V produced using high cell density. advanced trench -20V/-2.0A, RDS(ON) =78m(typ)@VGS =-1.8V technology to provide excel
smc3407.pdf
SMC3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design
smc3401.pdf
SMC3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ)@VGS =-2.5V provide excelle
smc3400.pdf
SMC3400 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3400 is the N-Channel logic enhancement 30V/5A, RDS(ON) =25m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4A, RDS(ON) =28m(typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3A, RDS(ON) =37m(typ.)@VGS =2.5V provide excellent RDS(ON).lo
smc3407s.pdf
SMC3407Swww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
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