SMC4812 Datasheet and Replacement
Type Designator: SMC4812
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 7.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 4.8 nC
tr ⓘ - Rise Time: 37.6 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SOP-8
SMC4812 substitution
SMC4812 Datasheet (PDF)
smc4812.pdf

SMC4812 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC4812 is the N-Channel logic 30V / 7.8A, RDS(ON) =14m(typ.)@VGS =10V enhancement mode power field effect transistor is 30V / 5.8A, RDS(ON) =20m(typ.)@VGS =4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology to provide exce
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