All MOSFET. SMC8810 Datasheet

 

SMC8810 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SMC8810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 298 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TSSOP-8

 SMC8810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SMC8810 Datasheet (PDF)

 ..1. Size:454K  semtron
 smc8810.pdf

SMC8810 SMC8810

SMC8810 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC8810 is the Dual N-Channel logic 20V/7.0A, RDS(ON) =11.5m(typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/7.0A, RDS(ON) =12.0m(typ.)@VGS =4.0V which is produced using high cell density. advanced 20V/6.5A, RDS(ON) =12.5m(typ.)@VGS =3.2V trench technology to prov

 0.1. Size:362K  semtron
 smc8810a.pdf

SMC8810 SMC8810

SMC8810A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC8810A is the Single N-Channel logic 20V/7.0A, RDS(ON) =14.5m(typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/6.5A, RDS(ON) =17m(typ.)@VGS =2.5V which is produced using high cell density. advanced 20V/5.0A, RDS(ON) =27m(typ.)@VGS =1.8V trench technology to prov

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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