All MOSFET. SMC8810A Datasheet

 

SMC8810A MOSFET. Datasheet pdf. Equivalent


   Type Designator: SMC8810A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 212 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP-8

 SMC8810A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SMC8810A Datasheet (PDF)

 ..1. Size:362K  semtron
 smc8810a.pdf

SMC8810A SMC8810A

SMC8810A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC8810A is the Single N-Channel logic 20V/7.0A, RDS(ON) =14.5m(typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/6.5A, RDS(ON) =17m(typ.)@VGS =2.5V which is produced using high cell density. advanced 20V/5.0A, RDS(ON) =27m(typ.)@VGS =1.8V trench technology to prov

 7.1. Size:454K  semtron
 smc8810.pdf

SMC8810A SMC8810A

SMC8810 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC8810 is the Dual N-Channel logic 20V/7.0A, RDS(ON) =11.5m(typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/7.0A, RDS(ON) =12.0m(typ.)@VGS =4.0V which is produced using high cell density. advanced 20V/6.5A, RDS(ON) =12.5m(typ.)@VGS =3.2V trench technology to prov

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQI5N15TU

 

 
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