All MOSFET. IXTK21N100 Datasheet

 

IXTK21N100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTK21N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 250 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO264

 IXTK21N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTK21N100 Datasheet (PDF)

 ..1. Size:137K  ixys
 ixtk21n100 ixtn21n100.pdf

IXTK21N100 IXTK21N100

IXTK 21N100 VDSS = 1000 VHigh VoltageIXTN 21N100 ID25 = 21 AMegaMOSTMFETsRDS(on) = 0.55 N-Channel, Enhancement ModeTO-264 AA (IXTK)Symbol Test Conditions Maximum RatingsIXTK IXTNVDSS TJ = 25C to 150C 1000 1000 VGD (TAB)DVDGR TJ = 25C to 150C; RGS = 1 M 1000 1000 VSVGS Continuous 20 20 VminiBLOC, SOT-227 BVGSM Transient 30

 8.1. Size:179K  ixys
 ixtk210p10t ixtx210p10t.pdf

IXTK21N100 IXTK21N100

Advance Technical InformationTrenchPTM VDSS = - 100VIXTK210P10TPower MOSFETs ID25 = - 210AIXTX210P10T RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C -100 V DSVDGR TJ = 25C to 150C, RGS

 9.1. Size:162K  ixys
 ixtk200n10p.pdf

IXTK21N100 IXTK21N100

VDSS = 100 VIXTK 200N10PPolarHTTMID25 = 200 APower MOSFET RDS(on) 7.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 200 AD(TAB)SID

 9.2. Size:129K  ixys
 ixtk20n150 ixtx20n150.pdf

IXTK21N100 IXTK21N100

High Voltage PowerVDSS = 1500VIXTK20N150MOSFETs w/ ExtendedID25 = 20AIXTX20N150FBSOARDS(on)

 9.3. Size:560K  ixys
 ixtk250n10.pdf

IXTK21N100 IXTK21N100

IXTK 250N10 VDSS = 100 VHigh CurrentID25 = 250 AMegaMOSTMFETRDS(on) = 5 mN-Channel Enhancement ModeSymbol Test conditions Maximum ratingsTO-264 AA (IXTK)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1.0 M 100 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GID25 TC = 25C MOSFET chip capability 250 ADID(RMS) Externa

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