All MOSFET. IXTK33N50 Datasheet

 

IXTK33N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTK33N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 227 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 635 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO264

 IXTK33N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTK33N50 Datasheet (PDF)

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 ixtk33n45 ixtk33n50.pdf

IXTK33N50 IXTK33N50

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 ixtk33n50.pdf

IXTK33N50 IXTK33N50

IXTK 33N50 VDSS = 500 VHigh CurrentID (cont) = 33 AMegaMOSTMFETRDS(on) = 0.17 N-Channel Enhancement ModePreliminary dataSymbol Test conditions Maximum ratings TO-264 AAVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1.0 M 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GDID25 TC = 25C 33 ASIDM TC = 25C, pulse

Datasheet: IXTH6N80A , IXTH6N90 , IXTH6N90A , IXTH75N10 , IXTH7P50 , IXTH8P50 , IXTK21N100 , IXTK33N45 , IRFZ24N , IXTK74N20 , IXTM10N100 , IXTM10N90 , IXTM11N80 , IXTM12N100 , IXTM12N50A , IXTM12N90 , IXTM13N80 .

 

 
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