SMM2348ES Datasheet and Replacement
Type Designator: SMM2348ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOT-23
SMM2348ES substitution
SMM2348ES Datasheet (PDF)
smm2348es.pdf

SMM2348ESwww.vishay.comVishay SiliconixMedical N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY High Quality Manufacturing Process UsingVDS (V) 30SMM Process FlowRDS(on) () at VGS = 10 V 0.024 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.032 100 % Rg and UIS TestedID (A) 8 Material categorization:Configuration SingleFor definiti
Datasheet: SML901R1AN , SML901R1HN , SML901R3AN , SML902R4BN , SML902RBN , SML9030-220M , SML9030-220M-ISO , SML9030-T254 , P0903BDG , SMMA511DJ , SMMB912DK , SMMBFJ310LT1G , SMMBFJ310LT3G , SMOS21N50 , SMOS26N50 , SMOS44N50 , SMOS44N50D2 .
History: UF640G-TQ2-R | H7N1004DS | STL260N3LLH6 | H7N1004LM
Keywords - SMM2348ES MOSFET datasheet
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History: UF640G-TQ2-R | H7N1004DS | STL260N3LLH6 | H7N1004LM



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