All MOSFET. SMM2348ES Datasheet

 

SMM2348ES Datasheet and Replacement


   Type Designator: SMM2348ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOT-23
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SMM2348ES Datasheet (PDF)

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SMM2348ES

SMM2348ESwww.vishay.comVishay SiliconixMedical N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY High Quality Manufacturing Process UsingVDS (V) 30SMM Process FlowRDS(on) () at VGS = 10 V 0.024 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.032 100 % Rg and UIS TestedID (A) 8 Material categorization:Configuration SingleFor definiti

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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