All MOSFET. SMMA511DJ Datasheet

 

SMMA511DJ Datasheet and Replacement


   Type Designator: SMMA511DJ
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SC-70-6
 

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SMMA511DJ Datasheet (PDF)

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SMMA511DJ

New ProductSMMA511DJVishay SiliconixN- and P-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY High Quality Manufacturing Process Using SMMN-CHANNEL P-CHANNELProcess FlowVDS (V) 12 - 12 Halogen-free According to IEC 61249-2-21RDS(on) () at VGS = 4.5 V 0.040 0.070DefinitionRDS(on) () at VGS = 2.5 V 0.048 0.100 TrenchFET Power MOSFETsRDS(on) ()

Datasheet: SML901R1HN , SML901R3AN , SML902R4BN , SML902RBN , SML9030-220M , SML9030-220M-ISO , SML9030-T254 , SMM2348ES , 5N65 , SMMB912DK , SMMBFJ310LT1G , SMMBFJ310LT3G , SMOS21N50 , SMOS26N50 , SMOS44N50 , SMOS44N50D2 , SMOS44N50D3 .

History: NCEP072N10A | SIZ704DT

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