SMMA511DJ Specs and Replacement

Type Designator: SMMA511DJ

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SC-70-6

SMMA511DJ substitution

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SMMA511DJ datasheet

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SMMA511DJ

New Product SMMA511DJ Vishay Siliconix N- and P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY High Quality Manufacturing Process Using SMM N-CHANNEL P-CHANNEL Process Flow VDS (V) 12 - 12 Halogen-free According to IEC 61249-2-21 RDS(on) ( ) at VGS = 4.5 V 0.040 0.070 Definition RDS(on) ( ) at VGS = 2.5 V 0.048 0.100 TrenchFET Power MOSFETs RDS(on) ( ) ... See More ⇒

Detailed specifications: SML901R1HN, SML901R3AN, SML902R4BN, SML902RBN, SML9030-220M, SML9030-220M-ISO, SML9030-T254, SMM2348ES, 2SK3568, SMMB912DK, SMMBFJ310LT1G, SMMBFJ310LT3G, SMOS21N50, SMOS26N50, SMOS44N50, SMOS44N50D2, SMOS44N50D3

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