SMOS21N50 Specs and Replacement

Type Designator: SMOS21N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO-247AD

SMOS21N50 substitution

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SMOS21N50 datasheet

 ..1. Size:135K  sirectifier
 smos21n50 smos26n50.pdf pdf_icon

SMOS21N50

SMOS21N50, SMOS26N50 Power MOSFETs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 S (TAB) E 4.32 5.49 0.170 0.216 D G F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 G=Gate, D=Drain, K 10.8 11.0 0.426 0.433 S=Source,TAB=Drain ... See More ⇒

Detailed specifications: SML9030-220M, SML9030-220M-ISO, SML9030-T254, SMM2348ES, SMMA511DJ, SMMB912DK, SMMBFJ310LT1G, SMMBFJ310LT3G, SI2302, SMOS26N50, SMOS44N50, SMOS44N50D2, SMOS44N50D3, SMOS44N80, SMOS48N50, SMP3003-DL-1E, SMP3003-DL-E

Keywords - SMOS21N50 MOSFET specs

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