IXTM12N100 MOSFET Datasheet: N-Ch, 1000V, 12A. Full specification with pinout and replacement list

IXTM12N100 Specs and Replacement

Type Designator: IXTM12N100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: TO204

IXTM12N100 substitution

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IXTM12N100 datasheet

..1. Size:105K ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒

7.1. Size:62K ixys
ixth12n50a ixtm12n50a.pdf pdf_icon

VDSS ID25 RDS(on) Standard IXTH 12 N50A 500 V 12 A 0.4 Power MOSFET IXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C12 A IDM TC ... See More ⇒

7.2. Size:65K ixys
ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf pdf_icon