VN3515L Specs and Replacement
Type Designator: VN3515L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: TO-92
VN3515L substitution
- MOSFET ⓘ Cross-Reference Search
VN3515L datasheet
vn3515 vn3515l.pdf
VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes Free from secondary breakdown a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power handling capab... See More ⇒
Detailed specifications: SMP3003-DL-1E, SMP3003-DL-E, SMP3003-TL-1E, SN7002N, SN7002W, VN30AB, VN3205N3, VN3205N8, IRF1405, VN35AB, VN35AK, VN4012L, VN66AD, VN66AK, VN67AB, VN67AD, VN67AFD
Keywords - VN3515L MOSFET specs
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