VN3515L Datasheet and Replacement
Type Designator: VN3515L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: TO-92
VN3515L substitution
VN3515L Datasheet (PDF)
vn3515 vn3515l.pdf

VN3515N-Channel Enhancement-ModeVertical DMOS FETFeatures General DescriptionThis enhancement-mode (normally-off) transistor utilizes Free from secondary breakdowna vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power handling capab
Datasheet: SMP3003-DL-1E , SMP3003-DL-E , SMP3003-TL-1E , SN7002N , SN7002W , VN30AB , VN3205N3 , VN3205N8 , IRF9640 , VN35AB , VN35AK , VN4012L , VN66AD , VN66AK , VN67AB , VN67AD , VN67AFD .
History: STD16NF06L-1 | MCU20N06B | SFS08R03GNF | AOB2608L | TMAN23N50A | PM2301 | CM120N06
Keywords - VN3515L MOSFET datasheet
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History: STD16NF06L-1 | MCU20N06B | SFS08R03GNF | AOB2608L | TMAN23N50A | PM2301 | CM120N06



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