VN4012L Datasheet and Replacement
Type Designator: VN4012L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
|Id| ⓘ - Maximum Drain Current: 0.16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO-92
VN4012L substitution
VN4012L Datasheet (PDF)
vn4012.pdf

Supertex inc. VN4012N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h
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