VNS008D Specs and Replacement
Type Designator: VNS008D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.77 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220AB
VNS008D substitution
- MOSFET ⓘ Cross-Reference Search
VNS008D datasheet
Detailed specifications: VN67AD, VN67AFD, VN67AK, VN89AB, VN90AB, VN98AK, VN99AK, VNS008A, 60N06, VNS009A, VNS009D, VNT008A, VNT008D, VNT009A, VNT009D, VP0104, VP0106
Keywords - VNS008D MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SSI60R260S2 | DH045N04
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