VNT009A Specs and Replacement

Type Designator: VNT009A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-3

VNT009A substitution

- MOSFET ⓘ Cross-Reference Search

 

VNT009A datasheet

 ..1. Size:291K  siliconix
 vns008a vns009a vnt008a vnt009a.pdf pdf_icon

VNT009A

VNS008A ... See More ⇒

 8.1. Size:285K  siliconix
 vns008d vns009d vnt008d vnt009d.pdf pdf_icon

VNT009A

VNS008D ... See More ⇒

Detailed specifications: VN98AK, VN99AK, VNS008A, VNS008D, VNS009A, VNS009D, VNT008A, VNT008D, IRF3205, VNT009D, VP0104, VP0106, VP0109, VP0550, VP0808, VP1008CSM4, VP2106

Keywords - VNT009A MOSFET specs

 VNT009A cross reference

 VNT009A equivalent finder

 VNT009A pdf lookup

 VNT009A substitution

 VNT009A replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs