VP0106 Datasheet and Replacement
Type Designator: VP0106
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 22 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO-92
VP0106 substitution
VP0106 Datasheet (PDF)
vp0106.pdf
Supertex inc. VP0106P-Channel Enhancement-ModeVertical DMOS FETsFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power
vp0104.pdf
Supertex inc. VP0104P-Channel Enhancement-ModeVertical DMOS FETsFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power
vp0109.pdf
Supertex inc. VP0109P-Channel Enhancement-ModeVertical DMOS FETsFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power
Datasheet: VNS008D , VNS009A , VNS009D , VNT008A , VNT008D , VNT009A , VNT009D , VP0104 , IRF840 , VP0109 , VP0550 , VP0808 , VP1008CSM4 , VP2106 , VP2110 , VP2206N2 , VP2206N3 .
Keywords - VP0106 MOSFET datasheet
VP0106 cross reference
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