VP0106 Datasheet. Specs and Replacement

Type Designator: VP0106  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-92

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VP0106 datasheet

 ..1. Size:633K  supertex
 vp0106.pdf pdf_icon

VP0106

Supertex inc. VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power ... See More ⇒

 9.1. Size:639K  supertex
 vp0104.pdf pdf_icon

VP0106

Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power ... See More ⇒

 9.2. Size:637K  supertex
 vp0109.pdf pdf_icon

VP0106

Supertex inc. VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power ... See More ⇒

Detailed specifications: VNS008D, VNS009A, VNS009D, VNT008A, VNT008D, VNT009A, VNT009D, VP0104, 20N60, VP0109, VP0550, VP0808, VP1008CSM4, VP2106, VP2110, VP2206N2, VP2206N3

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