VP0808 Datasheet and Replacement
Type Designator: VP0808
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-92
VP0808 substitution
VP0808 Datasheet (PDF)
vp0808.pdf

Supertex inc. VP0808P-Channel Enhancement-ModeVertical DMOS FETsFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power
Datasheet: VNT008A , VNT008D , VNT009A , VNT009D , VP0104 , VP0106 , VP0109 , VP0550 , 50N06 , VP1008CSM4 , VP2106 , VP2110 , VP2206N2 , VP2206N3 , VP2450N3 , VP2450N8 , VP3203N3 .
History: 2N5653
Keywords - VP0808 MOSFET datasheet
VP0808 cross reference
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History: 2N5653



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