VP0808 MOSFET. Datasheet pdf. Equivalent
Type Designator: VP0808
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 0.28 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
Package: TO-92
VP0808 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VP0808 Datasheet (PDF)
0.1. vp0808.pdf 
Size:545K _supertex
Supertex inc. VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, ► Low power drive requirement silicon-gate manufacturing process. This combination ► Ease of paralleling produces a device with the power
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
