All MOSFET. VP2206N2 Datasheet

 

VP2206N2 Datasheet and Replacement


   Type Designator: VP2206N2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-39
 

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VP2206N2 Datasheet (PDF)

 8.1. Size:692K  supertex
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VP2206N2

Supertex inc. VP2206P-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral Description Free from secondary breakdownThe Supertex VP2206 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. Ease of parallelingThis combination produces

Datasheet: VP0104 , VP0106 , VP0109 , VP0550 , VP0808 , VP1008CSM4 , VP2106 , VP2110 , IRF1404 , VP2206N3 , VP2450N3 , VP2450N8 , VP3203N3 , VP3203N8 , VP5225 , VS-FA40SA50LC , VS-FA72SA50LC .

History: KP980A | SQM40N10-30 | STC6602

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