VP2206N2 Specs and Replacement

Type Designator: VP2206N2

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-39

VP2206N2 substitution

- MOSFET ⓘ Cross-Reference Search

 

VP2206N2 datasheet

 8.1. Size:692K  supertex
 vp2206.pdf pdf_icon

VP2206N2

Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2206 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces... See More ⇒

Detailed specifications: VP0104, VP0106, VP0109, VP0550, VP0808, VP1008CSM4, VP2106, VP2110, IRF1404, VP2206N3, VP2450N3, VP2450N8, VP3203N3, VP3203N8, VP5225, VS-FA40SA50LC, VS-FA72SA50LC

Keywords - VP2206N2 MOSFET specs

 VP2206N2 cross reference

 VP2206N2 equivalent finder

 VP2206N2 pdf lookup

 VP2206N2 substitution

 VP2206N2 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.