VP2450N8 Datasheet and Replacement
Type Designator: VP2450N8
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm
Package: SOT-89
VP2450N8 substitution
VP2450N8 Datasheet (PDF)
vp2450.pdf

VP2450P-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral Description Free from secondary breakdown The Supertex VP2450 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure Low power drive requirementand Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produces a device with
Datasheet: VP0550 , VP0808 , VP1008CSM4 , VP2106 , VP2110 , VP2206N2 , VP2206N3 , VP2450N3 , IRF630 , VP3203N3 , VP3203N8 , VP5225 , VS-FA40SA50LC , VS-FA72SA50LC , VS-FB190SA10 , VS-FC220SA20 , VS-FC80NA20 .
History: PDN3916S | SRADM1007 | 4N80A | SSM3J56ACT | PSMN1R4-40YLD | H9926TS | STW20N90K5
Keywords - VP2450N8 MOSFET datasheet
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History: PDN3916S | SRADM1007 | 4N80A | SSM3J56ACT | PSMN1R4-40YLD | H9926TS | STW20N90K5



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