VP3203N8 Datasheet and Replacement
Type Designator: VP3203N8
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SOT-89
VP3203N8 substitution
VP3203N8 Datasheet (PDF)
vp3203.pdf

VP3203P-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral Description Free from secondary breakdown The Supertex VP3203 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure Low power drive requirementand Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produces a device with
Datasheet: VP1008CSM4 , VP2106 , VP2110 , VP2206N2 , VP2206N3 , VP2450N3 , VP2450N8 , VP3203N3 , IRFB4227 , VP5225 , VS-FA40SA50LC , VS-FA72SA50LC , VS-FB190SA10 , VS-FC220SA20 , VS-FC80NA20 , VT6J1 , VT6K1 .
History: SWF16N70D | SL9926A | KQB9N50 | HM2N15PR
Keywords - VP3203N8 MOSFET datasheet
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History: SWF16N70D | SL9926A | KQB9N50 | HM2N15PR



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