VP3203N8 Specs and Replacement

Type Designator: VP3203N8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: SOT-89

VP3203N8 substitution

- MOSFET ⓘ Cross-Reference Search

 

VP3203N8 datasheet

 8.1. Size:581K  supertex
 vp3203.pdf pdf_icon

VP3203N8

VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP3203 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertex s well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with... See More ⇒

Detailed specifications: VP1008CSM4, VP2106, VP2110, VP2206N2, VP2206N3, VP2450N3, VP2450N8, VP3203N3, AO3400, VP5225, VS-FA40SA50LC, VS-FA72SA50LC, VS-FB190SA10, VS-FC220SA20, VS-FC80NA20, VT6J1, VT6K1

Keywords - VP3203N8 MOSFET specs

 VP3203N8 cross reference

 VP3203N8 equivalent finder

 VP3203N8 pdf lookup

 VP3203N8 substitution

 VP3203N8 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.