All MOSFET. VS-FB190SA10 Datasheet

 

VS-FB190SA10 Datasheet and Replacement


   Type Designator: VS-FB190SA10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 351 nS
   Cossⓘ - Output Capacitance: 2800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: SOT-227
 

 VS-FB190SA10 substitution

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VS-FB190SA10 Datasheet (PDF)

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VS-FB190SA10

VS-FB190SA10www.vishay.comVishay SemiconductorsPower MOSFET, 190 AFEATURES Fully isolated package Very low on-resistance Fully avalanche rated Dynamic dV/dt rating Low drain to case capacitance Low internal inductance Optimized for SMPS applicationsSOT-227 Easy to use and parallel Industry standard outline Designed and qualified for in

Datasheet: VP2206N3 , VP2450N3 , VP2450N8 , VP3203N3 , VP3203N8 , VP5225 , VS-FA40SA50LC , VS-FA72SA50LC , P55NF06 , VS-FC220SA20 , VS-FC80NA20 , VT6J1 , VT6K1 , VT6M1 , HAF1002L , HAF1002S , HAF1003L .

History: AOT600A60L | FDMC8200

Keywords - VS-FB190SA10 MOSFET datasheet

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