All MOSFET. VS-FB190SA10 Datasheet

 

VS-FB190SA10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VS-FB190SA10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.35 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 250 nC
   trⓘ - Rise Time: 351 nS
   Cossⓘ - Output Capacitance: 2800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: SOT-227

 VS-FB190SA10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VS-FB190SA10 Datasheet (PDF)

 ..1. Size:276K  vishay
 vs-fb190sa10.pdf

VS-FB190SA10 VS-FB190SA10

VS-FB190SA10www.vishay.comVishay SemiconductorsPower MOSFET, 190 AFEATURES Fully isolated package Very low on-resistance Fully avalanche rated Dynamic dV/dt rating Low drain to case capacitance Low internal inductance Optimized for SMPS applicationsSOT-227 Easy to use and parallel Industry standard outline Designed and qualified for in

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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