VS-FB190SA10 Specs and Replacement

Type Designator: VS-FB190SA10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 568 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 190 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 351 nS

Cossⓘ - Output Capacitance: 2800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: SOT-227

VS-FB190SA10 substitution

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VS-FB190SA10 datasheet

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VS-FB190SA10

VS-FB190SA10 www.vishay.com Vishay Semiconductors Power MOSFET, 190 A FEATURES Fully isolated package Very low on-resistance Fully avalanche rated Dynamic dV/dt rating Low drain to case capacitance Low internal inductance Optimized for SMPS applications SOT-227 Easy to use and parallel Industry standard outline Designed and qualified for in... See More ⇒

Detailed specifications: VP2206N3, VP2450N3, VP2450N8, VP3203N3, VP3203N8, VP5225, VS-FA40SA50LC, VS-FA72SA50LC, AON6414A, VS-FC220SA20, VS-FC80NA20, VT6J1, VT6K1, VT6M1, HAF1002L, HAF1002S, HAF1003L

Keywords - VS-FB190SA10 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.