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HAF1002L Spec and Replacement


   Type Designator: HAF1002L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: LDPAK

 HAF1002L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HAF1002L Specs

 ..1. Size:200K  renesas
haf1002l haf1002s.pdf pdf_icon

HAF1002L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:56K  hitachi
haf1003l haf1003s.pdf pdf_icon

HAF1002L

HAF1003(L), HAF1003(S) Silicon P Channel MOS FET Series Power Switching ADE-208-626B (Z) 3rd. Edition July 2000 This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temperature lik... See More ⇒

 8.2. Size:75K  hitachi
haf1004l haf1004s.pdf pdf_icon

HAF1002L

HAF1004(L), HAF1004(S) Silicon P Channel MOS FET Series Power Switching ADE-208-629B (Z) 3rd. Edition May 2002 Description This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temp... See More ⇒

 8.3. Size:1643K  cn vbsemi
haf1004s.pdf pdf_icon

HAF1002L

HAF1004S www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symb... See More ⇒

Detailed specifications: VS-FA40SA50LC , VS-FA72SA50LC , VS-FB190SA10 , VS-FC220SA20 , VS-FC80NA20 , VT6J1 , VT6K1 , VT6M1 , IRFP250N , HAF1002S , HAF1003L , HAF1003S , HAF1004L , HAF1004S , HAF2007L , HAF2007S , HAF2011L .

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