IXTM15N60 Specs and Replacement

Type Designator: IXTM15N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO204

IXTM15N60 substitution

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IXTM15N60 datasheet

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IXTM15N60

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IXTM15N60

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IXTM15N60

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒

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IXTM15N60

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Detailed specifications: IXTM10N100, IXTM10N90, IXTM11N80, IXTM12N100, IXTM12N50A, IXTM12N90, IXTM13N80, IXTM14N80, 10N65, IXTM20N60, IXTM21N50, IXTM24N50, IXTM35N30, IXTM40N30, IXTM42N20, IXTM50N20, IXTM5N100

Keywords - IXTM15N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.