All MOSFET. IXTM15N60 Datasheet

 

IXTM15N60 Datasheet and Replacement


   Type Designator: IXTM15N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 150 nC
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO204
 

 IXTM15N60 substitution

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IXTM15N60 Datasheet (PDF)

 ..1. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTM15N60

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 7.1. Size:65K  ixys
 ixth15n45a ixth15n50a ixtm15n45a ixtm15n50a.pdf pdf_icon

IXTM15N60

 9.1. Size:105K  ixys
 ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTM15N60

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 9.2. Size:64K  ixys
 ixth10n60 ixth10n60a ixtm10n60 ixtm10n60a.pdf pdf_icon

IXTM15N60

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History: MEM2303M3 | SFI9614 | 60N03 | IPD06N03LA | FDMS7692A | 2SK3703 | IXTH6N80A

Keywords - IXTM15N60 MOSFET datasheet

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