All MOSFET. HAF1004L Datasheet

 

HAF1004L MOSFET. Datasheet pdf. Equivalent


   Type Designator: HAF1004L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7600 nS
   Cossⓘ - Output Capacitance: 326 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: DPAK-2

 HAF1004L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HAF1004L Datasheet (PDF)

 ..1. Size:75K  hitachi
 haf1004l haf1004s.pdf

HAF1004L HAF1004L

HAF1004(L), HAF1004(S)Silicon P Channel MOS FET SeriesPower SwitchingADE-208-629B (Z)3rd. EditionMay 2002DescriptionThis FET has the over temperature shutdown capability sensing to the junction temperature. This FET hasthe builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdownthe gate voltage in case of high junction temp

 7.1. Size:1643K  cn vbsemi
 haf1004s.pdf

HAF1004L HAF1004L

HAF1004Swww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symb

 8.1. Size:200K  renesas
 haf1002l haf1002s.pdf

HAF1004L HAF1004L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:56K  hitachi
 haf1003l haf1003s.pdf

HAF1004L HAF1004L

HAF1003(L), HAF1003(S)Silicon P Channel MOS FET Series Power SwitchingADE-208-626B (Z)3rd. EditionJuly 2000This FET has the over temperature shutdown capability sensing to the junction temperature. This FET hasthe builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdownthe gate voltage in case of high junction temperature lik

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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