HAF1004L. Аналоги и основные параметры

Наименование производителя: HAF1004L

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 20 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7600 ns

Cossⓘ - Выходная емкость: 326 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: DPAK-2

Аналог (замена) для HAF1004L

- подборⓘ MOSFET транзистора по параметрам

 

HAF1004L даташит

 ..1. Size:75K  hitachi
 haf1004l haf1004s.pdf pdf_icon

HAF1004L

HAF1004(L), HAF1004(S) Silicon P Channel MOS FET Series Power Switching ADE-208-629B (Z) 3rd. Edition May 2002 Description This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temp

 7.1. Size:1643K  cn vbsemi
 haf1004s.pdf pdf_icon

HAF1004L

HAF1004S www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symb

 8.1. Size:110K  1
 haf1008l haf1008s.pdf pdf_icon

HAF1004L

HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temper

 8.2. Size:200K  renesas
 haf1002l haf1002s.pdf pdf_icon

HAF1004L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... VS-FC80NA20, VT6J1, VT6K1, VT6M1, HAF1002L, HAF1002S, HAF1003L, HAF1003S, 2SK3878, HAF1004S, HAF2007L, HAF2007S, HAF2011L, HAF2011S, HAF2012L, HAF2012S, HAT1038RJ