All MOSFET. HCS20NT60V Datasheet

 

HCS20NT60V MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCS20NT60V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220F

 HCS20NT60V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCS20NT60V Datasheet (PDF)

 ..1. Size:378K  semihow
hcs20nt60v.pdf

HCS20NT60V HCS20NT60V

Apr 2014BVDSS = 600 VRDS(on) typ = 0.17 HCS20NT60V ID = 20 A600V N-Channel Super Junction MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Ope

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top