All MOSFET. HCS20NT60V Datasheet

 

HCS20NT60V Datasheet and Replacement


   Type Designator: HCS20NT60V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220F
 

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HCS20NT60V Datasheet (PDF)

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HCS20NT60V

Apr 2014BVDSS = 600 VRDS(on) typ = 0.17 HCS20NT60V ID = 20 A600V N-Channel Super Junction MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Ope

Datasheet: HAT3008RJ , HAT3018RJ , HCD6NC70S , HCD7N70S , HCH20NT60V , HCP12NK65V , HCP20NT60V , HCS12NK65V , STP80NF70 , HCT7000M , HCT7000MTXV , HCU6N70S , HCU7NE70S , HFA9N90 , HFB1N60S , HFB1N65S , HFB1N70S .

History: IPW50R299CP

Keywords - HCS20NT60V MOSFET datasheet

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