HCT7000MTXV Specs and Replacement
Type Designator: HCT7000MTXV
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: LCC
HCT7000MTXV substitution
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HCT7000MTXV datasheet
hct7000m hct7000mtxv.pdf
Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV Features Absolute Maximum Ratings Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V 200mA I D Gate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒
hct70r910.pdf
March 2020 HCT70R910 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 5.2 A Excellent stability and uniformity RDS(on), max 0.94 100% Avalanche Tested Built-in ESD Diode Qg, Typ 11.2 nC Application Package & Internal Circuit Switch Mode Powe... See More ⇒
hct70r1k1.pdf
August 2020 HCT70R1K1 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.1 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.3 nC Application Package & Internal Circuit Switch Mode Power... See More ⇒
Detailed specifications: HCD6NC70S, HCD7N70S, HCH20NT60V, HCP12NK65V, HCP20NT60V, HCS12NK65V, HCS20NT60V, HCT7000M, TK10A60D, HCU6N70S, HCU7NE70S, HFA9N90, HFB1N60S, HFB1N65S, HFB1N70S, HFD1N60S, HFD1N65S
Keywords - HCT7000MTXV MOSFET specs
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