All MOSFET. HFD2N60U Datasheet

 

HFD2N60U Datasheet and Replacement


   Type Designator: HFD2N60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: D-PAK
 

 HFD2N60U substitution

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HFD2N60U Datasheet (PDF)

 ..1. Size:381K  semihow
 hfd2n60u hfu2n60u.pdf pdf_icon

HFD2N60U

June 2015BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (T

 ..2. Size:199K  semihow
 hfd2n60u.pdf pdf_icon

HFD2N60U

Jan 2014BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Ty

 7.1. Size:160K  semihow
 hfd2n60s.pdf pdf_icon

HFD2N60U

March 2014BVDSS = 600 VRDS(on) typ HFD2N60S / HFU2N60SID = 1.9 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60S HFU2N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC

 7.2. Size:155K  semihow
 hfd2n60.pdf pdf_icon

HFD2N60U

July 2005BVDSS = 600 VRDS(on) typ HFD2N60 / HFU2N60ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60 HFU2N60 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ

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Datasheet: HFA9N90 , HFB1N60S , HFB1N65S , HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 , HFD2N60S , AO3407 , HFD2N65S , HFD2N65U , HFD2N70S , HFD2N90 , HFD3N80 , HFD4N50 , HFD5N40 , HFD5N50S .

Keywords - HFD2N60U MOSFET datasheet

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